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PDF PMEG6030EP Data sheet ( Hoja de datos )
| Número de pieza | PMEG6030EP | |
| Descripción | 3A low VF MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
Average forward current: IF(AV) ≤ 3 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 50 °C
[1] -
-
3
Tsp ≤ 135 °C
--3
VR reverse voltage
- - 60
VF forward voltage
IF = 3 A
- 460 530
IR reverse current
VR = 60 V
- 80 200
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA
1 page  
NXP Semiconductors
PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
102 duty cycle =
Zth(j-a)
(K/W)
10
1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02
0.01
1
0
006aab668
10−1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.1 A
IF = 0.5 A
IF = 1 A
IF = 1.5 A
IF = 2 A
IF = 3 A
IR
reverse current
VR = 5 V
VR = 10 V
VR = 60 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
Min Typ Max Unit
- 290 330 mV
- 340 400 mV
- 380 440 mV
- 400 470 mV
- 430 500 mV
- 460 530 mV
- 4 - μA
- 5 - μA
- 80 200 μA
- 360 - pF
- 120 - pF
PMEG6030EP_1
Product data sheet
Rev. 01 — 21 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG6030EP_1
20100120
Data sheet status
Product data sheet
PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
Change notice
-
Supersedes
-
PMEG6030EP_1
Product data sheet
Rev. 01 — 21 January 2010
© NXP B.V. 2010. All rights reserved.
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PMEG6030EP.PDF ] | |
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