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Número de pieza | IPD90N04S4L-04 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD90N04S4L-04 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD90N04S4L-04
Product Summary
V DS
R DS(on),max
ID
40 V
3.8 mΩ
90 A
PG-TO252-3-313
Type
IPD90N04S4L-04
Package
Marking
PG-TO252-3-313 4N04L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
84
360
95
90
+20/-16
71
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-06
1 page IPD90N04S4L-04
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
360
10 V
5V
320
280
240
200
160
120
80
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
250
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
15
3V
13 3.5 V
4.5 V
11
4V
4V 9
7
3.5 V
3V
34
4.5 V
5
5V
10 V
3
0 20 40 60 80 100 120 140
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
6
5.5
200
5
150 4.5
4
100
3.5
50
0
1
175 °C
25 °C
-55 °C
234
V GS [V]
3
2.5
5
2
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-04-06
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD90N04S4L-04.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD90N04S4L-04 | Power-Transistor | Infineon |
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