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PDF IPD40N03S4L-08 Data sheet ( Hoja de datos )
| Número de pieza | IPD40N03S4L-08 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD40N03S4L-08 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD40N03S4L-08
Product Summary
V DS
R DS(on),max
ID
30 V
8.3 mW
40 A
PG-TO252-3-11
Type
IPD40N03S4L-08
Package
Marking
PG-TO252-3-11 4N03L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
40
38
160
23
40
±16
42
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
-
Rev. 1.1
page 1
2010-10-05
1 page  
IPD40N03S4L-08
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
160
10 V
140
120
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
40
5V
3 V 3.5 V
4V
4.5 V
35
4.5 V
30
100 25
80 20
4V
60 15
40
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
120
-55 °C
100
3.5 V
3V
10
5
5V
10 V
0
34
0 20 40 60 80 100 120 140 160
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 40 A; V GS = 10 V
25 °C
175 °C
13
12
11
80 10
9
60
8
40 7
20
0
0123456
V GS [V]
6
5
4
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.1
page 5
2010-10-05
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD40N03S4L-08.PDF ] | |
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