|
|
Número de pieza | FTU01N60 | |
Descripción | 600V N-Channel MOSFET | |
Fabricantes | ark | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FTU01N60 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 600V N-Channel MOSFET
General Features
Low ON Resistance
Low Gate Charge (typical 4.8nC)
Fast Switching
100% Avalanche Tested
RoHS Compliant
Halogen-free available
Applications
High Efficiency SMPS
CFL
Active PFC
Low Power Lamp Ballasts
Low Power Adaptor/Battery Chargers
FTU01N60/FTD01N60
BVDSS
600V
RDS(ON) (Max.)
9.0Ω
ID
1.0A
Ordering Information
Part Number
Package
FTU01N60
TO-251(I-PAK)
FTU01N60G TO-251(I-PAK)
FTD01N60
TO-252(D-PAK)
FTD01N60G TO-252(D-PAK)
Marking
01N60
01N60G
01N60
01N60G
Remark
RoHS
Halogen-free
RoHS
Halogen-free
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-to-Source Voltage[1]
ID Continuous Drain Current
ID@100℃
IDM
PD
Continuous Drain Current
Pulsed Drain Current, VGS@10V[2]
Power Dissipation
Derating Factor above 25℃
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=40mH, ID=1.0A
Peak Diode Recovery dv/dt[3]
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
TJ and TSTG Operating and Storage Temperature Range
TC=25℃ unless otherwise specified
FTU01N60
FTD01N60
Unit
600 V
1.0
Figure 3
A
Figure 6
29 W
0.23 W/℃
±30 V
20 mJ
4.5 V/ns
300
-55 to 150
℃
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
1/11
Rev. 2.1 Jan. 2012
1 page FTU01N60/FTD01N60
Figure 6. Maximum Peak Current Capability
100
Transconductance may limit current in this region
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
tP, Pulse Width(s)
2.5
2
1.5
1
0.5
0
3
Figure 7. Typical Transfer Characteristics
-55℃
25℃
150℃
4567
VGS, Gate-to-Source Voltage,(V)
8
Figure 8. Unclamped Inductive Switching Capability
10
Starting TJ=25℃
1
Starting TJ=150℃
0.1
0.01
1.E-06
1.E-05 1.E-04 1.E-03 1.E-02
tAV, Time in Avalanche(s)
1.E-01
Figure 9. Typical Drain-to-Source ON Resistance
10
9.5
9
8.5
VGS=10V
8 VGS=20V
7.5
7
6.5
6
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, Drain Current(A)
Figure 10. Typical Drain-to-Source On Resistance
vs. Junction Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (℃)
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
5/11
Rev. 2.1 Jan. 2012
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FTU01N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
FTU01N60 | 600V N-Channel MOSFET | ark |
FTU01N60G | 600V N-Channel MOSFET | ark |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |