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Teilenummer | RF1S30N06LE |
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Beschreibung | N-Channel Enhancement-Mode Power MOSFETs | |
Hersteller | Harris | |
Logo | ||
Gesamt 6 Seiten RFP30N06LE, RF1S30N06LE,
SEMICONDUCTOR
RF1S30N06LESM
July 1995
30A, 60V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
Features
• 30A, 60V
• rDS(ON) = 0.047Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM
are N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Packages
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
F30N06LE
RF1S30N06LE
TO-262AA
1S30N06L
RF1S30N06LESM
TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Formerly developmental type TA49027.
Symbol
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Copyright © Harris Corporation 1995
5-45
D
G
S
RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM
60
60
+10, -8
UNITS
V
V
V
30
Refer to Peak Current Curve
Refer to UIS Curve
A
96
0.645
2
-55 to +175
260
W
W/oC
kV
oC
oC
File Number 3629.1
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Temperature Compensated PSPICE Model for the RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM
SUBCKT RFP30N06LE 2 1 3;
CA 12 8 1 3.34e-9
CB 15 14 3.44e-9
CIN 6 8 0 1.343e-9
rev 6/2/93
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 75.39
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 7.22e-9
LSOURCE 3 7 6.31e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 11.86e-3
RGATE 9 20 2.52
RIN 6 8 1e9
RSCL1 5 51 RSLVCMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 26.6e-3
RVTO 18 19 RVTOMOD 1
DPLCAP
10
5
DRAIN
2
LDRAIN
-
ESG
6
8
+
EVTO
9 20 + 18 -
LGATE RGATE 8
RSCL2
RSCL1
+ 51
5
51
ESCL
50
RDRAIN
16
VTO
-
+
21
6
MOS1
DBREAK
11
EBREAK +
17
18
-
MOS2
DESD1
91
DESD2
RIN CIN
RSOURCE
8
7
DBODY
LSOURCE
3
SOURCE
S1A
S2A
12 13 14 15
8 13
S1B
S2B
CA
13
+
CB
+ 14
EGS 6
8
-
EDS 5
8
-
RBREAK
17 18
RVTO
IT 19
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.5
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7))
.MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8)
.MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5)
.MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0)
.MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7)
.MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5)
.MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6)
.MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records 1991.
5-50
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ RF1S30N06LE Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RF1S30N06LE | 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs | Fairchild Semiconductor |
RF1S30N06LE | N-Channel Enhancement-Mode Power MOSFETs | Harris |
RF1S30N06LESM | 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs | Fairchild Semiconductor |
RF1S30N06LESM | 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs | Intersil Corporation |
RF1S30N06LESM | N-Channel Enhancement-Mode Power MOSFETs | Harris |
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