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PDF DK51 Data sheet ( Hoja de datos )
| Número de pieza | DK51 | |
| Descripción | NPN Silicon High Power Switching Transistor | |
| Fabricantes | Qunli Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DK51 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
DK51
NPN Silicon High Power Switching Transistor
Features:
1. Good switching character. Excellent capacity in anti-burnout.
2. Good temperature stability. Small saturation voltage drop.
3. Implementation of standards: GJB33A -97, QZJ840611A, QZJ840611
4. Use for high power switch circuit,switching voltage-stabilized sourcefy circuit.
5. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
Parameter name
Specifications
Symbols Unit
A B C D E FG
Total Dissipation
Ptot W
50
Max. Collector Current
Junction Temperature
Storage Temperature
ICM A
Tjm °C
Tstg °C
10
175
-55~+175
Collector-Emitter
Breakdown Voltage
V(BR)CEO V 30 50 80 110 150 200 250
E-Base Breakdown Voltage V(BR)EBO V
5
Collector- Emitter
Saturation Voltage Drop
VCE(sat) V
0.5
Collector-Emitter Leakage
Current
ICEO mA
3.0
DC Current Gain
Delay Time
Rise Time
Storage Time
Fall Time
hFE
td us
tr us
ts us
tf us
10
0.1
1.5
1.5
0.8
(Ta = 25°C )
Test Condition
Tc:75°C
IC=3mA
IE=3mA
IC=2.5A,IB=0.25A
VCE=A:20V,B:30V,C:50V,
D~G:100V
VCE=5V,IC=2.5A
VCE=25V
IC=2.5A
IB1=0.25A
IB2=-0.25A
Outline and Dimensions:
Contact:Jiandong Lei
Tel.:+86-917-6293906
Fax:+86-917-6297928
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet DK51.PDF ] | |
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