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PDF 1MBI200U4H-120L-50 Data sheet ( Hoja de datos )
| Número de pieza | 1MBI200U4H-120L-50 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1MBI200U4H-120L-50 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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http://www.fujielectric.com/products/semiconductor/
1MBI200U4H-120L-50
IGBT MODULE (U series)
1200V / 200A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
Ic Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Reverse voltage for FWD
VR
Forword current for FWD
IF
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
-
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1ms
1ms
1 device
Continuous
1ms
AC : 1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1200
±20
300
200
600
400
100
200
1040
1200
300
600
+150
-40~+125
2500
3.5
4.5
Units
V
V
A
W
V
A
°C
°C
VAC
Nm
1
1 page  
1MBI200U4H-120L-50
FWD
Forward current vs. Forward on voltage (typ.)
chip
700
600 Tj=25oC Tj=125oC
500
400
300
200
100
0
0123
Forward on voltage : VF [ V ]
4
Inverse Diode
Forward current vs. Forward on voltage (typ.)
chip
250
200 Tj=25oC Tj=125oC
150
100
50
0
0123
Forward on voltage : VF [ V ]
4
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
FWD
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, RG=3Ω
Irr(125oC)
Irr(25oC)
trr(125oC)
100 trr(25oC)
10
0
100 200 300
Forward current : IF [ A ]
400
1.000
0.100
Transient thermal resistance (max.)
Inberse Diode
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 1MBI200U4H-120L-50.PDF ] | |
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