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Número de pieza | SSV1BAW56LT1G | |
Descripción | Dual Switching Diode Common Anode | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! BAW56LT1G,
SBAW56LT1G,
BAW56LT3G,
SBAW56LT3G,
SSV1BAW56LT1G
Dual Switching Diode
Common Anode
Features
AEC−Q101 Qualified and PPAP Capable
S & SSV1 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
Non−Repetitive Peak Forward Current
t = 1 ms (Note 3)
VR
IF
IFM(surge)
IFSM
70
200
500
4
V
mA
mA
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board PD 225 mW
(Note 1) TA = 25C
Derate above 25C
1.8 mW/C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25C
Derate above 25C
PD 300 mW
2.4 mW/C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 C/W
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave; Tj = 25C.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
http://oneic.com/
1
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 12
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAW56LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAW56LT1G
BAW56LT3G
SBAW56LT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
SSV1BAW56LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAW56LT1/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SSV1BAW56LT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSV1BAW56LT1G | Dual Switching Diode Common Anode | ON Semiconductor |
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