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PBHV8560Z Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBHV8560Z
Beschreibung 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 13 Seiten
PBHV8560Z Datasheet, Funktion
PBHV8560Z
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
13 March 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9560Z
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability
High collector current gain hFE at high IC
AEC-Q101 qualified
3. Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit
- - 600 V
- - 0.5 A
70 135 -
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PBHV8560Z Datasheet, Funktion
NXP Semiconductors
200
hFE
150
100
50
(1)
(2)
(3)
PBHV8560Z
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
aaa-013428
200
hFE
150
100
50
aaa-014049
(1)
(2)
(3)
0
10-1
1
10
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
102 103
IC (mA)
Fig. 4. DC current gain as a function of collector
current; typical values
0.5
IC
(A)
0.4
IB = 30 mA
0.3
aaa-013429
27
24
21
18
15
12
9
6
0.2
3
0.1
0
10-1
1
Tamb = 25 °C
(1) VCE = 10 V
(2) VCE = 25 V
(3) VCE = 50 V
10
102 103
IC (mA)
Fig. 5. DC current gain as a function of collector
current; typical values
1.2 aaa-013430
VBE
(V)
0.8
(1)
(2)
0.4 (3)
0
012345
VCE (V)
Tamb = 25 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
0
10-1
1
10
VCE = 10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
102 103
IC (mA)
Fig. 7. Base-emitter voltage as a function of collector
current; typical values
PBHV8560Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
6 / 13

6 Page









PBHV8560Z pdf, datenblatt
NXP Semiconductors
PBHV8560Z
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PBHV8560Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
12 / 13

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