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PDF CJF2955 Data sheet ( Hoja de datos )
| Número de pieza | CJF2955 | |
| Descripción | PNP SILICON PLANAR POWER TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
CJF2955 PNP
CJF3055 NPN
TO-220FP Fully Isolated
Plastic Package
General Purpose Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Emitter (Sustaining) Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, TA=25ºC )
Collector Current
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
VCEO (sus)
VCES
VEBO
(1) VISOL (a)
(b)
IC
IB
PD **
PD
Tj,Tstg
90
90
5
3500
1500
10
6
30
0.25
2
0.016
- 55 to +150
V
V
V
VRMS
VRMS
A
A
W
W/ºC
W
W/ºC
ºC
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
Rth (j-a)
Rth (j-c)**
62.5
4
ºC/W
ºC/W
Lead Temperature for Soldering Purpose
TL
260
ºC
**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location
beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.
(1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX
UNIT
Collector Emitter sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
VCEO (sus) *
ICBO
ICES
IEBO
IC=200mA, IB=0
VCB=90V, IE=0
VCE=90V, VBE=0
VEB=5V, IC=0
90
1
1
1
V
µA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJF2955.PDF ] | |
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