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PDF CJF6107 Data sheet ( Hoja de datos )
| Número de pieza | CJF6107 | |
| Descripción | PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR POWER TRANSISTOR
CJF6107
TO-220FP Fully Isolated
Plastic Package
General Purpose Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, TA=25ºC )
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
VCBO
VCEO
VEBO
(1) VISOL (a)
(b)
IC
IB
PD**
PD
Tj,Tstg
80
70
5
3500
1500
7
10
3
34
0.27
2
0.016
- 65 to +150
V
V
V
VRMS
VRMS
A
A
A
W
W/ºC
W
W/ºC
ºC
THERMAL RESISTANCE
From Junction to Case
From Junction to Ambient
Rth (j-c)**
Rth (j-a)
3.7
62.5
ºC/W
ºC/W
Lead Temperature for Soldering Purpose
TL
260
ºC
**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location
beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.
(1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX
UNIT
Collector Emitter sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
VCEO (sus) *
ICES
ICEX
IEBO
IC=100mA, IB=0
VCE=80V, IB=0
VCE=80V, VEB(off)=1.5V
VEB=5V, IC=0
70
1
1
1
V
µA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJF6107.PDF ] | |
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