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ADA4177-4 Schematic ( PDF Datasheet ) - Analog Devices

Teilenummer ADA4177-4
Beschreibung Low Noise and Bias Current Op Amps
Hersteller Analog Devices
Logo Analog Devices Logo 




Gesamt 30 Seiten
ADA4177-4 Datasheet, Funktion
Data Sheet
OVP and EMI Protected, Precision,
Low Noise and Bias Current Op Amps
ADA4177-1/ADA4177-2/ADA4177-4
FEATURES
Low offset voltage: 60 µV maximum at 25°C (8-lead and
14-lead SOIC)
Low offset voltage drift: 1 µV/°C maximum (8-lead and
14-lead SOIC)
Low input bias current: 1 nA maximum at 25°C
Low voltage noise density: 8 nV/√Hz typical at 1 kHz
Large signal voltage gain (AVO): 100 dB minimum over full
supply voltage and operating temperature
Input overvoltage protection to 32 V above and below the
supply voltage rail
Integrated EMI filter
70 dB typical rejection at 1000 MHz
90 dB typical rejection at 2400 MHz
Rail-to-rail output swing
Low supply current: 500 µA typical per amplifier
Wide bandwidth
Gain bandwidth product (AV = +100): 3.5 MHz typical
Unity-gain crossover (AV = +1): 3.5 MHz typical
−3 dB bandwidth (AV = +1): 6 MHz typical
Dual-supply operation
Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V
Unity-gain stable
No phase reversal
APPLICATIONS
Wireless base station control circuits
Optical network control circuits
Instrumentation
Sensors and controls
Thermocouples, resistor thermal detectors (RTDs), strain
gages, shunt current measurements
Precision filters
GENERAL DESCRIPTION
The ADA4177-1 single channel, ADA4177-2 dual channel, and
ADA4177-4 quad channel amplifiers feature low offset voltage
(2 µV typical) and drift (1 µV/°C maximum), low input bias
current, low noise, and low current consumption (500 µA
typical). Outputs are stable with capacitive loads of more than
1000 pF with no external compensation.
The inputs of the ADA4177-1, ADA4177-2, and ADA4177-4 set a
new standard in precision amplifier robustness, providing input
protection against signal excursions 32 V beyond either supply, as
well as 70 dB of rejection for electromagnetic interference (EMI) at
1000 MHz.
Rev. C
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rights of third parties that may result from its use. Specifications subject to change without notice. No
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PIN CONNECTION DIAGRAM
OUT A 1
–IN A 2
+IN A 3
V– 4
ADA4177-2
TOP VIEW
(Not to Scale)
8 V+
7 OUT B
6 –IN B
5 +IN B
Figure 1. ADA4177-2
Applications for this amplifier include sensor signal conditioning
(such as thermocouples, RTDs, and strain gages), process control
front-end amplifiers, and precision diode power measurement in
optical and wireless transmission systems.
The ADA4177-2 and ADA4177-4 operate over the −40°C to
+125°C industrial temperature range. The ADA4177-1 and the
ADA4177-2 are available in an 8-lead SOIC package and an 8-lead
MSOP package. The ADA4177-4 is available in a 14-lead TSSOP
and a 14-lead SOIC package.
12
10
8
6 VSY = ±15V
4
2
0
–2
–4
–6
–8
–10
–50 –30 –10
10
30
50
VIN (V)
Figure 2. Overvoltage Current Limiting, Voltage Follower Configuration
Table 1. Evolution of Protected Input Op Amps by Generation1
Gen. 1,
OVP
(10 V)
Gen. 2,
OVP (25 V)
Gen. 3,
OVP (32 V)
Gen. 4
EMI Filters
Gen. 5, OVP
(32 V) + EMI
OP191
OP291
OP491
ADA4091-2
ADA4091-4
ADA4092-4
ADA4096-2
ADA4096-4
AD8657
AD8659
AD8546
AD8548
ADA4661-2
ADA4666-2
ADA4177-1
ADA4177-2
ADA4177-4
1 Gen. stands for Generation.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2014–2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com






ADA4177-4 Datasheet, Funktion
ADA4177-1/ADA4177-2/ADA4177-4
Data Sheet
Parameter
Symbol Test Conditions/Comments
Min Typ Max
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current per Amplifier
DYNAMIC PERFORMANCE
PSRR
ISY
VS = ±2.5 V to ±18 V
−40°C < TA < +125°C
VOUT = 0 V
−40°C < TA < +125°C
125 145
120
500 580
620
Slew Rate
Settling Time
To 0.1%
To 0.01%
Gain Bandwidth Product
Unity-Gain Crossover
−3 dB Closed-Loop Bandwidth
Total Harmonic Distortion Plus Noise
EMI Rejection of +IN x
f = 1000 MHz
SR
tS
GBP
UGC
f−3 dB
THD + N
EMIRR
RL = 2 kΩ
VIN = 10 V p-p, RL = 2 kΩ, AV = −1
VIN = 10 V p-p, RL = 2 kΩ, AV = −1
VIN = 10 mV p-p, RL = 2 kΩ, AV = +100
VIN = 10 mV p-p, RL = 2 kΩ, AV = +1
VIN = 10 mV p-p, RL = 2 kΩ, AV = +1
VIN = 1 V rms, AV = +1, RL = 2 kΩ, f = 1 kHz
VIN = 200 mV p-p
1.5
5.5
7.5
3.5
3.5
6
0.002
70
f = 2400 MHz
90
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
en p-p
en
0.1 Hz to 10 Hz
f = 10 Hz
f = 1 kHz
175
10
8
Current Noise Density
MULTIPLE AMPLIFIERS CHANNEL SEPARATION
in
CS
f = 1 kHz
f = 1 kHz
0.2
127
Unit
dB
dB
µA
µA
V/µs
µs
µs
MHz
MHz
MHz
%
dB
dB
nV p-p
nV/√Hz
nV/√Hz
pA/√Hz
dB
1 All inputs are stressed to 32 V beyond supplies for 500 ms. See Figure 74 for the typical input bias current vs. the input voltage over the overvoltage protected input range.
Rev. C | Page 6 of 31

6 Page









ADA4177-4 pdf, datenblatt
ADA4177-1/ADA4177-2/ADA4177-4
90
VSY = ±5V
80 TSSOP
70
60
50
40
30
20
10
0
VOS (µV)
Figure 15. Input Offset Voltage (VOS) Distribution, VSY = ±5 V,
14-Lead TSSOP
160
VSY = ±5V
8-LEAD SOIC, 14-LEAD SOIC
120
80
40
0
–40
–80
–120
–160
–40 –25 –10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
Figure 16. Input Offset Voltage (VOS) vs. Temperature, VSY = ±5 V,
8-Lead SOIC and 14-Lead SOIC
300
VSY = ±5V
8-LEAD MSOP, 14-LEAD TSSOP
200
100
0
–100
–200
–300
–40 –25 –10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
Figure 17. Input Offset Voltage (VOS) vs. Temperature, VSY = ±5 V,
8-Lead MSOP and 14-Lead TSSOP
Data Sheet
90
VSY = ±15V
80 TSSOP
70
60
50
40
30
20
10
0
VOS (µV)
Figure 18. Input Offset Voltage (VOS) Distribution, VSY = ±15 V,
14-Lead TSSOP
160
VSY = ±15V
8-LEAD SOIC, 14-LEAD SOIC
120
80
40
0
–40
–80
–120
–160
–40 –25 –10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
Figure 19. Input Offset Voltage (VOS) vs. Temperature, VSY = ±15 V,
8-Lead SOIC and 14-Lead SOIC
300
VSY = ±15V
8-LEAD MSOP, 14-LEAD TSSOP
200
100
0
–100
–200
–300
–40 –25 –10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
Figure 20. Input Offset Voltage (VOS) vs. Temperature, VSY = ±15 V,
8-Lead MSOP and 14-Lead TSSOP
Rev. C | Page 12 of 31

12 Page





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