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Teilenummer | C1675 |
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Beschreibung | NPN SIlicon | |
Hersteller | FGX | |
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Gesamt 1 Seiten ■■APPLICATION:FM/AM RF AMP, MIX, CONV,OSC,IF.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING UNIT
VCBO
50
V
VCEO
30
V
VEBO
5
V
IC 50 mA
PC 250 mW
TJ 150 ℃
Tstg ﹣55~150 ℃
C1675
—NPN silicon —
■■ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 40
240 VCE= 6 V,Ic= 1 mA
Collector Cut-off Current
ICBO
0.1 µA
VCB= 50V,IE=0
Emitter Cut-off Current
IEBO
0.1 µA
VEB= 5 V,Ic=0
Collector-Base Breakdown Voltage BVCBO 50
V Ic= 10µA,IE=0
Collector-Emitter Breakdown Voltage BVCEO 30
V Ic= 5 mA,IB=0
Emitter-Base Breakdown Voltage
BVEBO
5
V IE= 10µA,Ic=0
Collector-Emitter Saturation Voltage VCE(sat)
0.08 0.3 V
Ic= 10 mA,IB= 1 mA
Base-Emitter Voltage
VBE
0.67 0.75 V
VCE= 6 V,Ic= 1 mA
Gain bandwidth product
fT 150 300
MHz Ic= 1 mA,VCE= 6 V
Common Base Output Capacitance Cob
2.0 2.5 PF
VCB= 6 V, IE=0, f = 1 MHz
■■hFE Classification
Classification R O Y
hFE
40~80
70~140
120~240
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ C1675 Schematic.PDF ] |
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