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PDF UMG3N Data sheet ( Hoja de datos )
| Número de pieza | UMG3N | |
| Descripción | General purpose transistors | |
| Fabricantes | Jin Yu Semiconductor | |
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General purpose transistors (dual transistors)
UMG3N
SOT-353
FEATURES
z Two DTC143T chips in a package
z Mounting possible with SOT-353 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
1
Marking: G3
Equivalent circuit
(3) (2) (1)
R1 R1
DTr2
DTr1
(4) (5)/(6)
Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Storage Temperature
LIMITS
50
50
5
100
150
150
-55~+150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Input resistor
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
R1
Test conditions
IC=50μA,IE=0
IC=1mA,IB=0
IE=50μA,IC=0
VCB=50V,IE=0
VEB=4V,IC=0
VCE=5V,IC=1mA
IC=5mA,IB=0.25mA
VCE=10V,IE=-5mA, f=100MHz
Min
50
50
5
100
3.29
Typ
250
4.7
Max
0.5
0.5
600
0.3
6.11
Unit
V
V
V
uA
uA
V
MHz
kΩ
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet UMG3N.PDF ] | |
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