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PDF R8120S3S Data sheet ( Hoja de datos )
| Número de pieza | R8120S3S | |
| Descripción | ISL9R8120S3S | |
| Fabricantes | Fairchild Semiconductor | |
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May 2002
ISL9R8120P2 / ISL9R8120S3S
8A, 1200V Stealth™ Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes
optimized for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery current (IRM(REC)) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 32ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC TO-220AC
CATHODE
(BOTTOM SIDE
METAL)
ANODE
CATHODE
JEDEC TO-263AB
N/C
ANODE
CATHODE
(FLANGE)
Symbol
K
A
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 105oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
1200
1200
1200
8
16
100
71
20
-55 to 150
300
260
V
V
V
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S Rev. A
1 page  
Typical Performance Curves (Continued)
DUTY CYCLE - DESCENDING ORDER
0.5
1.0 0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
101
Test Circuit and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
VGE
t1
t2
DUT CURRENT
RG SENSE
+
MOSFET
VDD
-
IF
0
dIF
dt
trr
ta tb
0.25 IRM
IRM
Figure 13. Itrr Test Circuit
Figure 14. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
Q1
DUT
R
+
VDD
VDD
-
Figure 15. Avalanche Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
VAVL
IL
IV
IL
t0 t1 t2
t
Figure 16. Avalanche Current and Voltage
Waveforms
ISL9R8120P2 / ISL9R8120S3S Rev. A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet R8120S3S.PDF ] | |
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