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Teilenummer | G7N60A4D |
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Beschreibung | HGTG7N60A4D | |
Hersteller | Fairchild Semiconductor | |
Logo | ![]() |
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Gesamt 9 Seiten ![]() Data Sheet
HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
January 2005
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49333.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG7N60A4D
HGTP7N60A4D
TO-247
TO-220AB
G7N60A4D
G7N60A4D
HGT1S7N60A4DS
TO-263AB
G7N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
Symbol
C
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
CG
COLLECTOR
(FLANGE)
G
E
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2005 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
![]() ![]() HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
1.4
FREQUENCY = 1MHz
1.2
1.0
0.8 CIES
0.6
0.4
0.2 COES
CRES
0
0 20 40 60 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.8 DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs
2.6
2.4
ICE = 14A
2.2
2.0
1.8
9
ICE = 7A
ICE = 3.5A
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
35
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
30
25
20
125oC
25oC
15
10
5
0
01234
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
5
60
50 125oC tb
40
IEC = 7A, VCE = 390V
30
20
10
100
125oC ta
25oC ta
25oC tb
200 300 400 500 600
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
700
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
100
dIEC/dt = 200A/µs
80
125oC trr
60
40
20
0
0
125oC tb
125oC ta
25oC trr
25oC ta
25oC tb
2 4 6 8 10 12 14
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
500
VCE = 390V
400
125oC, IEC = 7A
300 125oC, IEC = 3.5A
200
100
0
100
25oC, IEC = 7A
25oC, IEC = 3.5A
200 300 400 500 600
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
700
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
©2005 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
6 Page | ||
Seiten | Gesamt 9 Seiten | |
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