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PDF GFP4N60 Data sheet ( Hoja de datos )
| Número de pieza | GFP4N60 | |
| Descripción | N-channel enhancement mode power field effect Transistors | |
| Fabricantes | Chinahaiso electronic | |
| Logotipo |  |
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Chinahaiso electronic Co.Ltd
http://www.chinahaiso.com
MOSFET
GFP 4N60
GFP 4N60
General description
These N-channel enhancement mode power field effect
Transistors are produced using planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switch mode power supply.
Absolute maximum ratings T=25℃ unless otherwise noted
Characteristics
Symbol
Drain-SourceVoltage
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance ,Junction-to Case
Drain-source Diode Forward Voltage
BVDSS
ID
VGS
EAS
PD
TSTG
RθJC
VSD
Value
600
4.4
±30
260
106
-55 --150
1.18
1.4
Units
V
A
V
mJ
W
℃
℃/W
V
1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GFP4N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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