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Teilenummer | D428 |
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Beschreibung | NPN Transistor - 2SD428 | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD428
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High Power Dissipation-
: PC= 60W(Max)@TC=25℃
·Complement to Type 2SB558
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
www.DataSheet.co.kr
V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
IE Emitter Current-Continuous
Collector Power Dissipation
PC @TC=25℃
TJ Junction Temperature
-7 A
60 W
150 ℃
Tstg Storage Temperature
-65~150 ℃
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ D428 Schematic.PDF ] |
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