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Teilenummer | W26NM60 |
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Beschreibung | STW26NM60 | |
Hersteller | STMicroelectronics | |
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Gesamt 11 Seiten STW26NM60
STU26NM60, STU26NM60I
N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I
Zener-Protected MDmesh™ Power MOSFET
TYPE
VDSS
RDS(on)
ID
STW26NM60
STU26NM60
STU26NM60I
600 V
600 V
600 V
< 0.135 Ω
< 0.135 Ω
< 0.135 Ω
30 A
26 A
26 A
n TYPICAL RDS(on) = 0.125Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
TO-247
123
Max220
Max220I
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
STW26NM60
W26NM60
STU26NM60
U26NM60
STU26NM60I
U26NM60I
PACKAGE
TO-247
Max220
Max220I
PACKAGING
TUBE
TUBE
TUBE
February 2002
1/11
STW26NM60, STU26NM60, STU26NM60I
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
6/11
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ W26NM60 Schematic.PDF ] |
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