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Número de pieza | PZD502CY | |
Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Fabricantes | NIKO-SEM | |
Logotipo | ||
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N-Channel Logic Level Enhancement PZD502CY
Mode Field Effect Transistor
SOT-323
(Preliminary)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 450mΩ
ID
0.75A
ESD Protected Gate
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
ID
IDM
PD
Tj, Tstg
LIMITS
20
±8
0.75
0.6
2
0.49
0.3
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
RJA
255 °C/W
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 55 °C
VGS = 1.8V, ID = 0.35A
VGS = 2.5V, ID = 0.5A
VGS = 4.5V, ID = 0.6A
VDS = 5V, ID =0.6A
LIMITS
UNIT
MIN TYP MAX
20
0.35 0.65 1
±30
1
10
V
A
A
464 850
307 765 mΩ
240 450
2S
REV 0.8
1
C-17-3
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet PZD502CY.PDF ] |
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