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GLT41316-40TQ Schematic ( PDF Datasheet ) - ETC

Teilenummer GLT41316-40TQ
Beschreibung 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Hersteller ETC
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Gesamt 22 Seiten
GLT41316-40TQ Datasheet, Funktion
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features :
65,536 words by 16 bits organization.
Fast access time and cycle time.
Dual WE Input.
Low power dissipation.
Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden
Refresh and Test Mode Capability.
256 refresh cycles per 4ms.
Available in 40-pin 400 mil SOJ,and 40/44
pin TSOP (II).
Single 5.0V±10% Power Supply.
All inputs and Outputs are TTL
compatible. Fast Page Mode operation.
Description :
The GLT41316 is a 65,536 x 16 bit high-
performance CMOS dynamic random access
memory. The GLT41316 offers Fast Page
mode ,and has both BYTE WRITE and
WORD WRITE access cycles via two WE
pins. The GLT41316 has symmetric address
and accepts 256-cycle refresh in 4ms
interval.
All inputs are TTL compatible. Fast
Page Mode operation allows random access
up to 256x16 bits, within a page, with cycle
times as short as 18ns.
The GLT41316 is best suited for
graphics, and DSP applications requiring
high performance memories.
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
Max. Column Address Access Time, (tAA)
Min. Fast Page Mode Cycle Time, (tPC)
Min. Read/Write Cycle Time, (tRC)
Max. CAS Access Time (tCAC)
30
30 ns
15 ns
18 ns
65 ns
10 ns
35
35 ns
18 ns
21 ns
70 ns
11 ns
40
40 ns
20 ns
23 ns
75 ns
12 ns
45
45 ns
22 ns
25 ns
80 ns
12 ns
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.






GLT41316-40TQ Datasheet, Funktion
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
AC Characteristics (0°C TA 70°C, See note 1,2)
Test condition:VCC=5.0V±10%, VIH/VIL=2.4V/0.8V,VOH/VOL=2.4V/0.4V
Parameter
tRAC = 30 ns tRAC = 35 ns tRAC = 40 ns tRAC = 45 ns
Symbo MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
l
Read/Write Cycle Time
tRC 65 - 70 - 75 - 80 - ns
Read Midify Write Cycle Time
tRWC
80
-
99
- 105 - 110 - ns
Access Time from RAS
tRAC - 30 - 35 - 40 - 45 ns 3,4
Access Time from CAS
tCAC - 10 - 11 - 12 - 12 ns 3,4
Access Time from Column Address
tAA - 15 - 18 - 20 - 22 ns 3,4
CAS to Output in Low-Z
tCLZ 0
0 - 0 - 0 - ns 3
Output Buffer Turn-off Delay from CAS tOFF 3 8 3 8 3 8 3 8 ns 7
Transition Time(Rise and Fall)
tT 3 50 3 50 3 50 3 50 ns 2
RAS Precharge Time
tRP 25 - 25 - 25 - 25 - ns
RAS Pulse Width
tRAS 30 100k 35 100k 40 100K 45 100K ns
RAS Hold Time
tRSH
10
-
12
-
12
-
13
- ns
CAS Hold Time
tCSH
30
-
36
-
40
-
46
- ns
CAS Pulse Width
tCAS 10 10000 12 10000 12 10000 13 10000 ns
RAS to CAS Delay Time
tRCD 13 20 17 24 18 28 18 33 ns 4
RAS to Column Address Delay Time
tRAD 10 15 12 17 13 20 13 23 ns 4
CAS to RAS Precharge Time
tCRP
5
-
5
-
5
-
5
- ns 8
Row Address Setup Time
tASR 0 - 0 - 0 - 0 - ns
Row Address Hold Time
tRAH
7
-
7
-
8
-
8
- ns
Column Address Setup Time
tASC 0 - 0 - 0 - 0 - ns
Column Address Hold Time
tCAH
6
-
6
-
6
-
6
- ns
Column Address Hold Time Referenced tAR
26 - 30 - 34 - 39 - ns
to RAS
Column Address Lead Time Referenced tRAL 15 - 18 - 20 - 23 - ns
to RAS
Read Command Setup Time
tRCS
0
-
0
-
0
-
0
- ns
Read Command Hold Time Referenced tRRH
0
-
0
-
0
-
0
- ns 9
to RAS
Read Command Hold Time Referenced tRCH
0
-
0
-
0
-
0
- ns 9
to CAS
WE Hold Time Referenced to CAS
tWCH
6
-
6
-
6
-
6
- ns 10
Write Command Hold Time Referenced tWCR 26 - 30 - 34 - 39 - ns 5
to RAS
WE Pulse Width
tWP 6 - 6 - 6 - 6 - ns 10
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-6-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

6 Page









GLT41316-40TQ pdf, datenblatt
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Read - Modify - Write Cycle
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
- 12 -
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

12 Page





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