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PDF C5240 Data sheet ( Hoja de datos )
| Número de pieza | C5240 | |
| Descripción | NPN Transistor - 2SC5240 | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C5240 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number : EN5762
NPN Triple Diffused Planar Silicon Transistor
2SC5420
Inverter Lighting Applications
Features
• High breakdown voltage (VCBO=1000V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit: mm
2069B-SMP-FD
[2SC5420]
10.2 4.5
1.3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
1.2
0.8
2
13
2.55 2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Ratings
1000
450
9
5
10
1.75
50
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
ICBO
ICES
VCEO(SUS)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
VCB=450V, IE=0
VCE=1000V, RBE=0
IC=100mA, IB=0
VEB=9V, IC=0
IC=2.5A, IB=0.5A
IC=2.5A, IB=0.5A
VCE=5V, IC=0.3A
VCE=5V, IC=2.0A
IC=2.5A, IB1=0.5A, IB2=–1.0A
IC=2.5A, IB1=0.5A, IB2=–1.0A
Ratings
Unit
min typ max
10 µA
1.0 mA
450 V
1.0 mA
1.0 V
1.5 V
30 40 50
10
2.5 µs
0.15 µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-1037 No.5762-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C5240.PDF ] | |
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