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C1008 Schematic ( PDF Datasheet ) - SeCoS

Teilenummer C1008
Beschreibung NPN Plastic Encapsulated Transistor
Hersteller SeCoS
Logo SeCoS Logo 




Gesamt 1 Seiten
C1008 Datasheet, Funktion
Elektronische Bauelemente
2SC1008
0.7A , 80 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
CLASSIFICATION OF hFE
Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G
Range
40~80
70~140 120~240 200~400
TO-92
GH
J
AD
B
K
E CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
Collector


Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
80
60
8
0.7
800
156
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
80
60
8
-
-
40
-
-
30
-
- - V IC=0.1mA, IE=0
- - V IC=10mA, IB=0
- - V IE=0.01mA, IC=0
- 0.1 μA VCB=60V, IE=0
- 0.1 μA VEB=5V, IC=0
- 400
VCE=2V, IC=50mA
- 0.4 V IC=500mA, IB=50mA
- 1.1 V IC=500mA, IB=50mA
- - MHz VCE=10V, IC=50mA
8 - pF VCB=10V, IC=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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