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GI856 Schematic ( PDF Datasheet ) - General Semiconductor

Teilenummer GI856
Beschreibung FAST SWITCHING PLASTIC RECTIFIER
Hersteller General Semiconductor
Logo General Semiconductor Logo 




Gesamt 2 Seiten
GI856 Datasheet, Funktion
GI850 THRU GI858
FAST SWITCHING PLASTIC RECTIFIER
Reverse Voltage - 50 to 800 Volts Forward Current - 3.0 Amperes
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High surge current capability
Fast switching for high efficiency
Construction utilizes void-free molded plastic technique
High forward current operation
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs (2.3kg) tension
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum non-repetitive peak reverse voltage
VRSM
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=90°C
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
Maximum instantaneous forward voltage at:
3.0A
9.4A, TJ=175°C
VF
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
IR
Typical junction capacitance (NOTE 1)
CJ
Maximum reverse recovery time (NOTE 2)
trr
Maximum reverse recovery current (NOTE 2)
IRM(REC)
Typical thermal resistance (NOTE 3)
RΘJA
RΘJL
Operating junction and storage temperature range
TJ, TSTG
GI850
50
35
50
75
150
GI851
100
70
100
150
GI852
200
140
200
250
3.0
GI854
400
280
400
450
100.0
1.25
1.10
10.0
150 200 250
28.0
200.0
2.0
22.0
8.0
-50 to +150
GI856
600
420
600
650
300
GI858
800
510
800
880
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Volts
500 µA
pF
ns
Amps
°C/W
°C
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/µs, and Irr=10% IRM for measurement of trr
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length,
with both leads equally heat sink
4/98





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