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GP801DDS18 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP801DDS18
Beschreibung Dual Switch Low VCE(SAT) IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
GP801DDS18 Datasheet, Funktion
GP801DDS18
Replaces January 2000 version, DS235-3.0
FEATURES
s Low VCE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 800A Per Arm
GP801DDS18
Dual Switch Low VCE(SAT) IGBT Module
DS5235-4.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
800A
1600A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
12(C2)
2(C2)
7(C1)
4(E2)
1(E1)
11(G2)
10(E2)
3(C1)
5(E1)
6(G1)
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DDS18
Note: When ordering, please use the whole part number.
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






GP801DDS18 Datasheet, Funktion
GP801DDS18
1600
1400
1200
Tj = 25˚C
1000
800
Tj = 125˚C
600
400
200
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
2000
1800
1600
1400
1200
1000
800
600
400
Tcase = 125˚C
Vge = ±15V
200 Rg(min) = 2.2
Rg(min) : Minimum recommended value
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
RBSOA
Fig. 8 Reverse bias safe operating area
2000
10000
IC max. (single pulse)
1000
100
10
100
50µs
100µs
tp = 1ms
10
1
Diode
Transistor
1
1 10 100 1000
Collector-emitter voltage, Vce - (V)
Fig. 9 Forward bias safe operating area
10000
0.1
1
10 100 1000
Pulse width, tp - (ms)
Fig. 10 Transient thermal impedance
10000
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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