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GP800NSM33 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP800NSM33
Beschreibung Hi-Reliability Single Switch IGBT Module Preliminary Information
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
GP800NSM33 Datasheet, Funktion
GP800NSM33
GP800NSM33
Hi-Reliability Single Switch IGBT Module
Preliminary Information
DS5372-2.0 February 2001
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
s 3300V Rating
s 800A Per Module
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP800NSM33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800NSM33
Note: When ordering, please use the complete part number.
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.4V
800A
1600A
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
C1
E1
E2
G
E2
C1
C2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9






GP800NSM33 Datasheet, Funktion
GP800NSM33
10000
IC max. (single pulse)
1000
100
tp = 100µs
100
10
Diode
Transistor
tp = 1ms
1
10
Conditions:
Tvj = 125˚C, Tcase = 80˚C
1
1 10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.7 Forward bias safe operating area
10000
0.1
0.001
0.01 0.1
Pulse width, tp - (ms)
1
Fig.8 Transient thermal impedance
10
1400
1200
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 9 DC current rating vs case temperature
300
290
280
270
260
250
240
230
220
210
200
0
Tvj = 25˚C, VCE = 25V
VGE = 0V, f = 1MHz
10 20 30 40 50
Collector-emitter voltage, VCE - (V)
Fig.10 Typical input capacitance
60
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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