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PDF GP800DDS18 Data sheet ( Hoja de datos )
| Número de pieza | GP800DDS18 | |
| Descripción | Dual Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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GP800DDS18
Replaces October 2000 version, DS5165-4.2
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate With Al O Substrate
23
s Low Inductance Internal Construction
s Full 1800V Rating
s 800A Per Arm
GP800DDS18
Dual Switch IGBT Module
DS5165-5.0 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
3.5V
800A
1600A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP800DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800DDS18
Note: When ordering, please use the complete part number.
12(C2)
2(C2)
7(C1)
4(E2)
1(E1)
11(G2)
10(E2)
3(C1)
5(E1)
6(G1)
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP800DDS18
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12V
1200
1000
Vge = 10V
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12V
1200
1000
Vge = 10V
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
350
Tcase = 125˚C
VGE = ±15V
300 VCE = 900V
Rg = 2.2Ω
250
200
150
100
EON
EOFF
EREC
50
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.5 Typical switching energy vs collector current
700
Tcase = 125˚C
VGE = ±15V
600 VCE = 900V
IC = 800A
500
EON
400
EOFF
300
200
EREC
100
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| PDF Descargar | [ Datasheet GP800DDS18.PDF ] | |
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