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GP500LSS06S Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP500LSS06S
Beschreibung Single Switch IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
GP500LSS06S Datasheet, Funktion
GP500LSS06S
GP500LSS06S
Single Switch IGBT Module
Replaces January 2000 version, DS4324-5.0
DS4324-6.0 October 2001
FEATURES
s n - Channel
s High Switching Speed
s Low Forward Voltage Drop
s Isolated Base
APPLICATIONS
s PWM Motor Control
s UPS
KEY PARAMETERS
VCES
VCE(sat)
IC25
IC75
IC(PK)
600V
(typ) 2.2V
(max) 700A
(max) 500A
(max) 1400A
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP500LSS06S is a single switch 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
GP500LSS06S
Note: When ordering, use complete part number.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
4
52
3
1
Outline type code: L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






GP500LSS06S Datasheet, Funktion
GP500LSS06S
75
70
Tj = 25˚C
VGE = ±15V
65 VCE = 300V
60
55 A
50 B
45 C
40
35
30
25
20
15
10 A: Rg = 15
5
B: Rg = 10
C: Rg = 5
0
0 100 200 300 400 500
Collector current, IC - (A)
Fig.7 Typical turn-off energy vs collector current
75
70
Tj = 125˚C
VGE = ±15V
65 VCE = 300V
60
A
B
C
55
50
45
40
35
30
25
20
15
10 A: Rg = 15
5
B: Rg = 10
C: Rg = 5
0
0 100 200 300 400 500
Collector current, IC - (A)
Fig.8 Typical turn-off energy vs collector current
5
Tj = 25˚C
VGE = ±15V
VCE = 300V
4
Rg = 5
5
Tj = 125˚C
VGE = ±15V
VCE = 300V
4
Rg = 5
33
Rg = 10
Rg = 10
22
Rg = 15
Rg = 15
11
0
0 100 200 300 400 500
Collector current, IC - (A)
Fig.9 Typical diode turn-off energy vs collector current
0
0 100 200 300 400 500
Collector current, IC - (A)
Fig.10 Typical diode turn-off energy vs collector current
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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