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GP401DDM18 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP401DDM18
Beschreibung Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 7 Seiten
GP401DDM18 Datasheet, Funktion
GP401DDM18
GP401DDM18
Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module
Advance Information
DS5397-1.2 January 2001
FEATURES
s Low VCE(SAT)
s 400A Per Switch
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
2.6V
400A
800A
APPLICATIONS
s High Reliability
s Motor Controllers
s Traction Drives
s Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP401DDM18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP401DDM18
Note: When ordering, please use the complete part number.
12(C2)
2(C2)
7(C1)
4(E2)
1(E1)
11(G2)
10(E2)
3(C1)
5(E1)
6(G1)
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See Package Details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/7






GP401DDM18 Datasheet, Funktion
GP401DDM18
ASSOCIATED PUBLICATIONS
Title
Electrostatic handling precautions
An introduction to IGBTs
IGBT ratings and characteristics
Heatsink requirements for IGBT modules
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
Parallel operation of IGBTs punch through vs non-punch through characteristics
Guidance notes for formulating technical enquiries
Principle of rating parallel connected IGBT modules
Short circuit withstand capability in IGBTs
Driving Dynex Semincoductor IGBT modules with Concept gate drivers
Application Note
Number
AN4502
AN4503
AN4504
AN4505
AN4506
AN4507
AN4508
AN4869
AN5000
AN5167
AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
6/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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