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PDF GP250MHB06S Data sheet ( Hoja de datos )
| Número de pieza | GP250MHB06S | |
| Descripción | Half Bridge IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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GP250MHB06S
GP250MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4325 - 5.0
DS4325-6.0 October 2001
FEATURES
s n - Channel
s High Switching Speed
s Low Forward Voltage Drop
s Isolated Base
APPLICATIONS
s PWM Motor Control
s UPS
KEY PARAMETERS
VCES
V
CE(sat)
IC25
IC75
IC(PK)
600V
(typ) 2.2V
(max) 350A
(max) 250A
(max) 700A
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP250MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
GP250MHB06S
Note: When ordering, use complete part number.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP250MHB06S
TYPICAL CHARACTERISTICS
500
Common emitter
450 Tcase = 25˚C
400
Vge = 20/15V
Vge = 12V
350
300
250
200
Vge = 10V
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
500
Common emitter
450 Tcase = 125˚C
400
Vge = 20/15V
Vge = 12V
350
300
250
200
Vge = 10V
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
30.0
27.5
25.0
Tj = 25˚C
VGE = ±15V
VCE = 300V
22.5
A
20.0
17.5
B
15.0
12.5
10.0
C
7.5
5.0
2.5
0
0
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
50 100 150 200 250
Collector current, IC - (A)
300
Fig.5 Typical turn-on energy vs collector current
30.0
27.5
25.0
Tj = 125˚C
VGE = ±15V
VCE = 300V
A
22.5 B
20.0
17.5 C
15.0
12.5
10.0
7.5
5.0 A: Rg = 15Ω
2.5 B: Rg = 10Ω
C: Rg = 5Ω
0
0 50 100 150 200 250 300
Collector current, IC - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GP250MHB06S.PDF ] | |
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