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PDF GP2401ESM18 Data sheet ( Hoja de datos )
| Número de pieza | GP2401ESM18 | |
| Descripción | Hi-Reliability Single Switch Low VCE(SAT) IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP2401ESM18
GP2401ESM18
Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
Replaces February 2000 version, DS5345-1.0
DS5345-2.4 January 2001
FEATURES
s Low VCE(SAT)
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
2.6V
2400A
4800A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Low-Loss System Retrofits
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP2401ESM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
GP2401ESM18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
C3
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP2401ESM18
TYPICAL CHARACTERISTICS
4800
Common emitter
4200 Tcase = 25˚C
Vge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
4800
4200
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0
1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
6.0
Fig. 4 Typical output characteristics
2.0
Tcase = 125˚C
1.8 VGE = 15V
VCE = 900V
1.6
RG = 2.2
L = 50nH
1.4
1.2
EOFF
EON
1.0
0.8
0.6 EREC
0.4
0.2
0
0 400 800 1200 1600 2000 2400
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
4.5
Tcase = 125˚C
4.0
VGE = 15V
VCE = 900V
IC = 2400A
3.5 L = 50nH
3.0
EOFF
2.5
EON
2.0
1.5
1.0
0.5 EREC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GP2401ESM18.PDF ] | |
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