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GP201MHS18 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP201MHS18
Beschreibung Low VCE(SAT) Half Bridge IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
GP201MHS18 Datasheet, Funktion
GP201MHS18
FEATURES
s Low VCE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 200A Per Arm
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
GP201MHS18
Low VCE(SAT) Half Bridge IGBT Module
DS5290-2.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
2.6V
200A
400A
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP201MHS18
Note: When ordering, please use the complete part number.
Fig. 1 Half bridge circuit diagram
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






GP201MHS18 Datasheet, Funktion
GP201MHS18
50
VGE = ±15V
45 VCE = 900V
40
Tcase = 125˚C
35
Tcase = 25˚C
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175 200
Collector current, IT - (A)
600
td(off)
500
td(on)
400
300
tf
200
100 tr
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 7 Typical diode turn-off energy vs collector current
Fig. 7 Typical diode reverse recovery charge vs collector current
400
350
Tj = 25˚C
300
250
Tj = 125˚C
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 9 Diode typical forward characteristics
500
450
400
350
300
250
200
150
100
Tcase = 125˚C
Vge = ±15V
50 Rg(min) = 4.7
Rg(min) : Minimum recommended value
0
0 400 800 1200 1600
Collector-emitter voltage, Vce - (V)
2000
Fig. 10 Reverse bias safe operating area
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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