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GP200MLS12 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP200MLS12
Beschreibung IGBT Chopper Module Preliminary Information
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
GP200MLS12 Datasheet, Funktion
GP200MLS12
FEATURES
s Internally Configured With Lower Arm Controlled
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
GP200MLS12
IGBT Chopper Module
Preliminary Information
DS5421-1.5 April 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.7V
200A
400A
APPLICATIONS
s High Power Choppers
s Motor Controllers
s Induction Heating
s Resonant Converters
s Power Supplies
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP200MLS12 is a 1200V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the lower arm of the bridge controlled. The
module incoporates high current rated freewheel diodes. The
IGBT has a wide reverse bias safe operating area (RBSOA)
ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MLS12
Note: When ordering, please use the whole part number.
11(C2)
1(A1C2)
2(E2)
6(G2)
7(E2)
3(K1)
Fig. 1 Chopper circuit diagram
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






GP200MLS12 Datasheet, Funktion
GP200MLS12
36
VGE = ±15V
32 VCE = 900V
28
Tcase = 125˚C
24
20 Tcase = 25˚C
16
12
8
4
0
0 25 50 75 100 125 150 175 200
Collector current, IT - (A)
Fig. 7 Freewheel diode typical turn-off energy
vs collector current
900
800
700
600
500
400
300
200
100
0
0
td(off)
td(on)
Tj = 125˚C
VGE = ±15V
VCE = 600V
Rg = 4.7
tf
tr
50 100 150
Collector current, IC - (A)
200
Fig. 8 Typical switching characteristics
400 10000
Tj = 25˚C
350 Tj = 125˚C
300 1000 IC max. (single pulse)
250
200
100 IC max. DC
50µs
100µs
150
100
10
(continuous)
tp = 1ms
50
0
0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage, VF - (V)
1
1
10 100 1000
Collector-emitter voltage, Vce - (V)
10000
Fig. 9 Freewheel diode typical forward characteristics
Fig. 10 Reverse bias safe operating area
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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