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PDF GP200MKS12 Data sheet ( Hoja de datos )
| Número de pieza | GP200MKS12 | |
| Descripción | IGBT Chopper Module Preliminary Information | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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GP200MLK12
FEATURES
s Internally Configured With Upper Arm Controlled
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
GP200MKS12
IGBT Chopper Module
Preliminary Information
DS5448-1.2 April 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.7V
200A
400A
APPLICATIONS
s High Power Choppers
s Motor Controllers
s Induction Heating
s Resonant Converters
s Power Supplies
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP200MLS12 is a 1200V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the upper arm of the bridge controlled. The
module incoporates high current rated freewheel diodes. The
IGBT has a wide reverse bias safe operating area (RBSOA)
ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MKS12
Note: When ordering, please use the whole part number.
1(A,E)
9(C1)
2(K)
3(C)
5(E1)
4(G)
Fig. 1 Chopper circuit diagram
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP200MLK12
TYPICAL CHARACTERISTICS
400
Common emitter
350 Tcase = 25˚C
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
5.0
400
Common emitter
Tcase = 125˚C
350
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
5.0
60
Tj = 125˚C
VGE = ±15V
50 VCE = 600V
40
30
A
B
C
20
10 A: Rg = 10Ω
B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
50
Tj = 125˚C
45 VGE = ±15V
VCE = 600V
40
35
A
B
C
30
25
20
15
10
A: Rg = 10Ω
5 B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
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