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GP200MHS18 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP200MHS18
Beschreibung Half Bridge IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
GP200MHS18 Datasheet, Funktion
GP200MHS18
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 200A Per Arm
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
3.5V
200A
400A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP200MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MHS18
Note: When ordering, please use the whole part number.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






GP200MHS18 Datasheet, Funktion
GP200MHS18
100
Tcase = 25˚C
90 VGE = ±15V
VCE = 900V
80
A
70
B
60
50 C
40
30
20
A: Rg = 15Ω
10 B: Rg = 10Ω
C: Rg = 4.7Ω
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 7 Typical turn-off energy vs collector current
240
Tcase = 125˚C
220 VGE = ±15V
200 VCE = 900V
180 A
160
140 B
120
100 C
80
60
40 A: Rg = 15Ω
20
B: Rg = 10Ω
C: Rg = 4.7Ω
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 8 Typical turn-off energy vs collector current
30
VGE = ±15V
VCE = 900V
25
20
Tcase = 125˚C
15 Tcase = 25˚C
10
5
0
0 25 50 75 100 125 150 175 200
Collector current, IT - (A)
Fig. 9 Typical diode turn-off energy vs collector current
2400
2200
2000
1800
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.7Ω
1600
1400
1200
tf
1000
800
td(off)
600
400
td(on)
200
0
0
tr
20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Typical switching times vs collector current
Fig. 10 Typical switching characteristics vs collector current
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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