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Teilenummer | GP1600FSS18 |
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Beschreibung | Single Switch IGBT Module | |
Hersteller | Dynex Semiconductor | |
Logo | ||
Gesamt 9 Seiten GP1600FSS18
Replaces January 2000 version, DS5136-3.0
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1600A Per Module
GP1600FSS18
Single Switch IGBT Module
DS5176-4.2 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
3.5V
1600A
3200A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1600FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1600FSS18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
GP1600FSS18
3200
2800
2400
Tj = 25˚C
2000
1600
Tj = 125˚C
1200
800
400
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
3500
3000
2500
2000
1500
1000
500
Conditions:
Tcase = 125˚C,
Vge = 15V,
Rg(off) = 2.2Ω
0
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
10000
IC max. (single pulse)
1000
100
IC max. DC
(continuous)
10
100
50µs
100µs
tp = 1ms
10
1
Diode
Transistor
1
1 10 100 1000
Collector-emitter voltage, Vce - (V)
Fig. 9 Forward bias safe operating area
10000
0.1
0.001
0.01 0.1
Pulse width, tp - (s)
1
Fig. 10 Transient thermal impedance
10
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ GP1600FSS18 Schematic.PDF ] |
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