Datenblatt-pdf.com


GP1600FSM12 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP1600FSM12
Beschreibung Single Switch IGBT Module Advance Information
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
GP1600FSM12 Datasheet, Funktion
GP1600FSM12
GP1600FSM12
Single Switch IGBT Module
Advance Information
DS5451-1.2 October 2001
FEATURES
s High Thermal Cycling Capability
s 1600A Per Module
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
1200V
(typ) 2.7V
(max) 1600A
(max) 3200A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The GP1600FSM12 is a singlel switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig.1 Single switch circuit diagram
Aux C
Aux E
E1
C1
ORDERING INFORMATION
Order As:
GP1600FSM12
Note: When ordering, please use the complete part number.
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






GP1600FSM12 Datasheet, Funktion
GP1600FSM12
600
Conditions:
Tcase = 25˚C,
VCE = 600V,
500 VGE = 15V
400
300
600
Conditions:
Tcase = 125˚C,
VCE = 600V,
500 VGE = 15V
A
400
B
C 300
A
B
C
200 200
100
0
0
A : Rg = 3.3
B : Rg = 4.7
C : Rg = 7
200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig.9 Typical turn-off energy vs collector current
100
0
0
A : Rg = 7
B : Rg = 4.7
C : Rg = 3.3
200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig.10 Typical turn-off energy vs collector current
120
Conditions:
VCE = 600V,
VGE = 15V,
100 Rg = 3.3
80
60
40
Tcase = 125˚C
Tcase = 25˚C
2500
2000
1500
td(off)
td(on)
1000
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3
20
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
500
0
0
tf
tr
200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig.11 Typical diode turn-off energy vs collector current
Fig.12 Typical switching times
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

6 Page







SeitenGesamt 10 Seiten
PDF Download[ GP1600FSM12 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
GP1600FSM12Single Switch IGBT Module Advance InformationDynex Semiconductor
Dynex Semiconductor
GP1600FSM18Hi-Reliability Single Switch IGBT ModuleDynex Semiconductor
Dynex Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche