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GP1200FSM18 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer GP1200FSM18
Beschreibung Hi-Reliability Single Switch IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
GP1200FSM18 Datasheet, Funktion
GP1200FSM18
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
s 1200A Per Module
GP1200FSM18
Hi-Reliability Single Switch IGBT Module
DS5410-1.2 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
3.5V
1200A
2400A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1200FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1200FSM18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9






GP1200FSM18 Datasheet, Funktion
GP1200FSM18
2400
2200
2000
1800
Tj = 25˚C
1600
1400
1200
Tj = 125˚C
1000
800
600
400
200
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
3000
2500
2000
1500
1000
Tcase = 125˚C
500 Vge = ±15V
Rg(off) = 2.2Ω
0
0 400 800 1200 1600
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
2000
10000
1000
IC max (DC)
100
10
100
tp = 50µs
tp = 100µs
tp = 1ms
10
1
Diode
Transistor
1
1 10 100 1000
Collector emitter voltage, Vce - (V)
Fig. 9 Forward bias safe operating area
10000
0.1
0.001
0.01
0.1
Pulse width, tp - (s)
1
Fig. 10 Transient thermal impedance
10
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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