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PDF BD772-GR Data sheet ( Hoja de datos )
| Número de pieza | BD772-GR | |
| Descripción | PNP Silicon Plastic-Encapsulate Transistor | |
| Fabricantes | MCC | |
| Logotipo |  |
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
• Halogen free available upon request by adding suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Capable of 0.5Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking: B772
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
ICEO
IEBO
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-100uAdc, IC=0)
Collector Cutoff Current
(VCB=-40Vdc, IE=0)
Collector Cutoff Current
(VCE=-30Vdc, IB=0)
Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0)
ON CHARACTERISTICS
-30 --- Vdc
-40 --- Vdc
-5.0 --- Vdc
--- -1.0 uAdc
--- -10 uAdc
--- -1.0 uAdc
h FE(1)
V CE(sat)
V BE(sat)
DC Current Gain
(IC=-1.0Adc, VCE=-2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-2.0Adc, IB=-0.2Adc)
Base-Emitter Saturation Voltage
(IC=-2.0Adc, IB=-0.2Adc)
60 400 ---
--- -0.5 Vdc
--- -1.5 Vdc
SMALL-SIGNAL CHARACTERISTICS
f T Transistor Frequency
(I C=-0.1Adc, VCE=-5.0Vdc, f=10MHz) 80 --- MHz
CLASSIFICATION OF HFE (1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
BD772-R
BD772-O
BD772-Y
BD772-GR
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-89
C
D
G
1
A
B
H
F
2 3
K
E
J
1. BASE
2. COLLETOR
3. EMITTER
.061
1.55
25
REF.
Revision: B
www.mccsemi.com
1 of 3
2013/01/01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BD772-GR.PDF ] | |
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