|
|
Teilenummer | D2236 |
|
Beschreibung | NPN Transistor - 2SD2236 | |
Hersteller | Inchange Semiconductor | |
Logo | ||
Gesamt 2 Seiten INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2236
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·Wide Area of Safe Operation
·Complement to Type 2SB1477
APPLICATIONS
·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
100 V
wwwVCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
5A
60 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
| ||
Seiten | Gesamt 2 Seiten | |
PDF Download | [ D2236 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
D2230 | METAL GATE RF SILICON FET | Seme LAB |
D2230UK | METAL GATE RF SILICON FET | Seme LAB |
D2231 | METAL GATE RF SILICON FET | Seme LAB |
D2231UK | METAL GATE RF SILICON FET | Seme LAB |
D2232UK | METAL GATE RF SILICON FET | Seme LAB |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |