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PDF D1964 Data sheet ( Hoja de datos )
| Número de pieza | D1964 | |
| Descripción | 2DD1964 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D1964 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
130
80
7
25
15
50
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
VCE = 2V, IC = 8A
IC = 7A, IB = 0.35A
IC = 15A, IB = 1.5A
IC = 7A, IB = 0.35A
IC = 15A, IB = 1.5A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 0.7A, IB2 = – 0.7A,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
10 µA
50 µA
80 V
45
90 260
30
0.5 V
1.5 V
1.5 V
2.5 V
20 MHz
0.5 µs
2.0 µs
0.2 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D1964.PDF ] | |
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