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PDF D879 Data sheet ( Hoja de datos )

Número de pieza D879
Descripción NPN Transistor - 2SD879
Fabricantes Sanyo Semicon Device 
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Ordering number:EN550F
NPN Epitaxial Planar Silicon Transistor
2SD879
1.5V, 3V Strobe Applications
Features
· In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
· The charge time is approximately 1 second faster
than that of germanium transistors.
· Less power dissipation because of low Collector-to-
Emitter Voltage VCE(sat), permitting more flashes of
light to be emitted.
· Small package and large allowable collector dissipa-
tion (TO-92, PC=750mW).
· Large current capacity and highly resistant to break-
down.
· Excellent linearity of hFE in the region from low
current to high current.
Specifications
Package Dimensions
unit:mm
2003B
[2SD879]
5.0
4.0
4.0
0.45
0.5
0.45
123
1.3 1.3
0.44
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
100ms single pulse
Conditions
Ratings
30
20
10
6
3
5
750
150
–55 to +150
Unit
V
V
V
V
A
A
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=3A (pulse)
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=3A, IB=60mA (pulse)
Ratings
min typ max
Unit
1.0 µA
1.0 µA
140 210
200 MHz
30 pF
0.3 0.4 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/N1596TS (KOTO) 8-3475/5137KI/3075KI/5244KI, TS No.550–1/4

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