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PDF R1151N Data sheet ( Hoja de datos )
| Número de pieza | R1151N | |
| Descripción | Boost type Voltage Regulator | |
| Fabricantes | RICOH | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de R1151N (archivo pdf) en la parte inferior de esta página. Total 26 Páginas | ||
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R1151N SERIES
Boost type Voltage Regulator with Reset
NO. EA-092-0307
OUTLINE
The R1151N Series are CMOS-based boost type voltage regulator ICs with high output voltage accuracy, low sup-
ply current, and high ripple rejection. Each of these voltage regulator controllers consists of a voltage reference unit,
an error amplifier, comparators, resistors for output and reset voltage setting, a current limit protection circuit, and a
chip enable circuit.
In addition to low consumption current by CMOS process, the chip enable function prolongs the battery life. Dy-
namic response and ripple rejection of the R1151N Series are excellent, further these are low noise type, plus maxi-
mum operating input voltage tolerance is up to 18.5V, thus these ICs are very suitable for the power supply for hand-
held equipment and other power management applications using AC adapter input voltage.
The output voltage of these ICs is internally fixed with high accuracy. Since the package for these ICs is SOT-23-6
(Mini-mold) package, high density mounting of the ICs on boards is possible.
FEATURES
• Ultra-Low Supply Current ............................................... Typ. 70µA (IOUT=0mA)
• Standby Mode ................................................................... Typ. 0.1µA
• Low Dropout Voltage ....................................................... Typ. 0.1V (IOUT=100mA *Depends on External Transistor)
• High Ripple Rejection ...................................................... Typ. 60dB (f=1kHz)
• Low Temperature-Drift Coefficient of Output Voltage ....... Typ.±100ppm/°C
• High Output Voltage Accuracy ........................................ ±2.0%
• Excellent Dynamic Response
• Small Package .................................................................. SOT-23-6 (Mini-mold)
• Output Voltage.................................................................. Stepwise setting with a step of 0.1V in the range of 2.5V to 9.0V
• Built-in chip enable circuit (2 types; A: active low, B: active high)
• Output Capacitor .............................................................. Tantalum type recommendation (or Ceramic+Series Resistor)
• Built-in output voltage detector ...................................... with delay (C version)
• Detector Threshold Tolerance......................................... ±2.5%
• Detector Threshold Voltage ............................................ Stepwise setting with a step of 0.1V in the range of 1.7V to 8.0V
• Operating Input Voltage ................................................... Max. 18.5V
APPLICATIONS
• Power source for handheld equipment such as cameras and videos.
• Power source for home appliances.
• Power source for battery-powered equipment.
1
1 page  
R1151N
• R1151NxxxC
Symbol
VOUT
IOUT
∆VOUT/∆IOUT
VDIF
ISS
IEXTleak
∆VOUT/∆VIN
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
EXT Leakage Current
Line Regulation
RR
VIN
∆VOUT/∆T
Ilim
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Current Limit
IRPT Short Current Limit
-VDET
VHYS
IOUT2
∆VDET/∆T
tPLH
VDDL
Detector Threshold
Detector Threshold
Hysteresis Range
Output Current 2
Detector Threshold
Temperature Coefficient
Output Delay Time
Minimum Operating Voltage
Conditions
VIN = Set VOUT+1V
IOUT = 50mA
VIN - VOUT = 1.0V
VIN = Set VOUT+1V
1mA ≤ IOUT ≤ 100mA
IOUT = 100mA
VIN = Set VOUT+1V, IOUT = 0mA
Set VOUT+0.5V ≤ VIN ≤ 18.5V
IOUT = 50mA
f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT+1V
IOUT = 10mA
-40°C ≤ Topt ≤ 85°C
Base Current IB of PNP Tr.
VIN - VOUT = 1.0V
Base Current IB of PNP Tr.
VOUT = 0V
VDD = 1.5V, VDS = 0.5V
-40°C ≤ Topt ≤ 85°C
CD=220pF*Note2
Min.
VOUT
×0.98
Typ.
1*Note1
Topt=25°C
Max.
Unit
VOUT
×1.02
V
A
Refer to the Load Regulation Table
0.1*Note1
70
100
0.5
V
µA
µA
0.00 0.02 0.10 %/V
60 dB
±100
18.5
V
ppm
/°C
8 27 mA
-VDET
×0.975
-VDET
×0.03
2.0
0.9
0.7
-VDET
×0.05
5.0
±100
1.6
0.9
-VDET
×1.025
-VDET
×0.07
10.0
2.7
1.1
mA
V
V
mA
ppm
/°C
ms
V
Note1:This item depends on the capability of external PNP transistor. Use low saturation type transistor with
hFE value range of 100 to 300.
Note2:VDET pin is pulled-up to VDD via 470kΩ resistance. The time is between the rising edge of VOUT level from
0.9V to (+VDET)+2.0V and the reaching point to ((+VDET)+2.0V)/2 of the VDET output voltage.
5
5 Page 
R1151N (VR=2.5V)
3.00
IOUT=0mA
2.75
2.50
2.25
2.00
1.75
1.50
1.25
IOUT=500mA
1.00
0 1 2 3 4 5 6 7 8 9 10 11121314 15 16 17 18
Input Voltage VIN(V)
3) Output Voltage vs. Temperature
5.125
R1151N (VR=5.0V)
VIN=6.0V
IOUT=80mA
5.075
5.025
4.975
4.925
4.875
-40
-15 10 35 60
Temperature Topt(°C)
85
R1151N (VR=2.5V)
VIN=3.5V
IOUT=80mA
2.538
2.513
2.488
2.463
2.438
-40
-15 10 35 60
Temperature Topt(°C)
85
R1151N
3.375
3.355
R1151N (VR=3.3V)
VIN=4.3V
IOUT=80mA
3.335
3.315
3.295
3.275
3.255
3.235
3.215
-40
-15 10 35 60
Temperature Topt(°C)
85
11
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet R1151N.PDF ] | |
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