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Teilenummer | A1441 |
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Beschreibung | Silicon PNP Power Transistor | |
Hersteller | INCHANGE | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1441
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A)
·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB=B -0.15A)
APPLICATIONS
·This type of power transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is
ideal for use as a driver in DC/DC converters and actuators.
i.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.iscsemSYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
wwwVCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7.0 V
IC Collector Current-Continuous
-5.0 A
ICM Collector Current-Pulse
-10 A
IBB Base Current-Continuous
-2.5 A
Total Power Dissipation @TC=25℃
25
PT
Total Power Dissipation @Ta=25℃
2.0
W
TJ Junction Temperature
Tstg Storage Temperature
150
-55~150
℃
℃
isc Website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ A1441 Schematic.PDF ] |
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