PDF RFG50N06 Data sheet ( Hoja de datos )

Número de pieza	RFG50N06
Descripción	Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Fabricantes	Harris
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No Preview Available ! SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features • 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufac- tured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE PART NUMBER PACKAGE BRAND RFG50N06 TO-247 RFG50N06 RFP50N06 TO-220AB RFP50N06 RF1S50N06 TO-262AA F1S50N06 RF1S50N06SM TO-263AB F1S50N06 NOTE: When ordering, use the entire part number. Add the sufﬁx, 9A, to obtain the TO-263AB variant in tape and reel, i.e.RF1S50N06SM9A. Formerly developmental type TA49018. DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE JEDEC TO-263AB Symbol G D GATE SOURCE MA DRAIN (FLANGE) S Absolute Maximum Ratings TC = +25oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS VDGR VGS ID IDM EAS IAM PD PT TSTG,TJ RFG50N06, RFP50N06 RF1S50N06, RF1S50N06SM 60 60 ±20 50 Refer to Peak Current Curve Refer to UIS Curve 125 131 0.877 -55 to +175 UNITS V V V A A W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright © Harris Corporation 1995 3-39 File Number 3575.2 1 page RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Typical Performance Curves (Continued) 300 100 STARTING TJ = +25oC 10 STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R ≠ 0 1 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.01 0.1 1 tAV, TIME IN AVALANCHE (msec) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms tP IAS BVDSS VDS VDD tAV FIGURE 14. UNCLAMPED ENERGY WAVEFORMS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS RG 0V tP VDS L DUT + VDD - IL 0.01Ω FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT VDS tON tD(ON) tR 90% tOFF tD(OFF) tF 90% 10% VGS 10% 50% PULSE WIDTH 10% 90% 50% FIGURE 16. RESISTIVE SWITCHING WAVEFORMS VGS 0V RGS VDD RL VDS DUT FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT 3-43 5 Page

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PDF Descargar	[ Datasheet RFG50N06.PDF ]

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