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GTL2002DP Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer GTL2002DP
Beschreibung 2-bit bi-directional low voltage translator
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 14 Seiten
GTL2002DP Datasheet, Funktion
INTEGRATED CIRCUITS
GTL2002
2-bit bi-directional low voltage translator
Product data sheet
Supersedes data of 2003 Apr 01
2004 Sep 29
Philips
Semiconductors






GTL2002DP Datasheet, Funktion
Philips Semiconductors
2-bit bi-directional low voltage translator
Product data sheet
GTL2002
Sizing pull-up resistor
The pull-up resistor value needs to limit the current through the pass transistor when it is in the “on” state to about 15 mA. This will guarantee a
pass voltage of 260 mV to 350 mV. If the current through the pass transistor is higher than 15 mA, the pass voltage will also be higher in the
“on” state. To set the current through each pass transistor at 15 mA, the pull-up resistor value is calculated as follows:
Pull–up voltage (V)*0.35 V
Resistor value (W) +
0.015 A
The table below summarizes resistor values for various reference voltages and currents at 15 mA and also at 10 mA and 3 mA. The resistor
value shown in the +10 % column or a larger value should be used to ensure that the pass voltage of the transistor would be 350 mV or less.
The external driver must be able to sink the total current from the resistors on both sides of the GTL–TVC device at 0.175 V, although the 15 mA
only applies to current flowing through the GTL–TVC device. See Application Note AN10145-01 Bi-Directional Voltage Translators for more
information.
PULL-UP RESISTOR VALUES
PULL-UP RESISTOR VALUE ()
VOLTAGE
15 mA
NOMINAL
+ 10 %
10 mA
NOMINAL
+ 10 %
5.0 V
310
341
465
512
3.3 V
197
217
295
325
2.5 V
143
158
215
237
1.8 V
97
106 145 160
1.5 V
77
85 115 127
1.2 V
57
63
NOTES:
1. Calculated for VOL = 0.35 V
2. Assumes output driver VOL = 0.175 V at stated current
3. +10 % to compensate for VDD range and resistor tolerance.
85
94
3 mA
NOMINAL
1550
983
717
483
383
283
+ 10 %
1705
1082
788
532
422
312
ABSOLUTE MAXIMUM RATINGS1, 2, 3
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VSREF DC source reference voltage
–0.5 to +7.0
V
VDREF DC drain reference voltage
–0.5 to +7.0
V
VGREF DC gate reference voltage
–0.5 to +7.0
V
VSn DC voltage Port Sn
–0.5 to +7.0
V
VDn DC voltage Port Dn
–0.5 to +7.0
V
IREFK DC diode current on reference pins
VI < 0 V
–50 mA
ISK DC diode current Port Sn
VI < 0 V
–50 mA
IDK DC diode current Port Dn
VI < 0 V
–50 mA
IMAX
DC clamp current per channel
Channel in ON-state
±128
mA
Tstg Storage temperature range
–65 to +150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
2004 Sep 29
6

6 Page









GTL2002DP pdf, datenblatt
Philips Semiconductors
2-bit bi-directional low voltage translator
VSSOP8: plastic very thin shrink small outline package; body width 2.3 mm
Product data sheet
GTL2002
SOT765-1
2004 Sep 29
12

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