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PDF GT50J325 Data sheet ( Hoja de datos )
| Número de pieza | GT50J325 | |
| Descripción | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
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GT50J325
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Fast Switching Applications
Unit: mm
· The 4th generation
· Enhancement-mode
· Fast switching (FS): Operating frequency up to 50 kHz (reference)
· High speed: tf = 0.05 µs (typ.)
· Low switching loss: Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
· Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector forward
current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
50
100
50
100
240
150
-55 to 150
Unit
V
V
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.521
2.30
Unit
°C/W
°C/W
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
Weight: 9.75 g
―
―
2-21F2C
Gate
Collector
Emitter
1
1 page  
30000
10000
C – VCE
Cies
3000
1000
300
100
Common emitter
30 VGE = 0
f = 1 MHz
Tc = 25°C
10
0.1 0.3 1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
GT50J325
VCE, VGE – QG
500
Common emitter
RL = 6 W
Tc = 25°C
400
300
300
200
200
VCE = 100 V
100
0
0 100 200 300
Gate charge QG (nC)
20
16
12
8
4
0
400
100 Common collector
VGE = 0
80
IF – VF
60
Tc = 125°C
40
-40
20 25
0
01234
Forward voltage VF (V)
5
trr, Irr – IF
100 Common collector
di/dt = -100 A/ms
VGE = 0
30
: Tc = 25°C
: Tc = 125°C
10
Irr
3
1 trr
0.3
0.1
0 10 20 30 40
Forward current IF (A)
10000
3000
1000
300
100
30
10
50
Safe operating area
300
100 IC max (pulse)*
IC max (continuous)
50 ms*
30 100 ms*
10 DC operation
3
*: Single pulse
1 Tc = 25°C
Curves must be
derated linearly with
0.3 increase in
temperature.
0.1
1 3 10
30
1 ms*
10 ms*
100 300 1000
Collector-emitter voltage VCE (V)
Reverse bias SOA
300
100
30
10
3
1
0.3 Tj <= 125°C
VGE = 15 V
0.1 RG = 13 W
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GT50J325.PDF ] | |
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