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GT25Q301 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer GT25Q301
Beschreibung N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 7 Seiten
GT25Q301 Datasheet, Funktion
GT25Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q301
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 3rd generation
· Enhancement-mode
· High speed: tf = 0.32 µs (max)
· Low saturation voltage: VCE (sat) = 2.7 V (max)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Diode forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Rating
1200
±20
25
50
25
50
200
150
55 to 150
Equivalent Circuit
Unit
V
V
A
A
W
°C
°C
Collector
Gate
Emitter
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2003-01-28






GT25Q301 Datasheet, Funktion
rth (t) – tw
102
Tc = 25°C
101
Diode stage
100
101
IGBT stage
102
103
101405
104
103
102 101
100
101
102
Pulse width tw (s)
GT25Q301
6 2003-01-28

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