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GT25G101 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer GT25G101
Beschreibung N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 4 Seiten
GT25G101 Datasheet, Funktion
GT25G101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON NCHANNEL IGBT
GT25G101
STROBE FLASH APPLICATIONS
Unit in mm
l High Input Impedance
l Low Saturation Voltage
l EnhancementMode
l 20V Gate Drive
: VCE (sat)=8V (Max.) (IC=170A)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
CollectorEmitter Voltage
GateEmitter Voltage
Collector Current
DC
1ms
Collector Power
Dissipation
Ta=25°C
Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL
VCES
VGES
IC
ICP
PC
PC
Tj
Tstg
RATING
400
±25
25
170
1.3
75
150
55~150
ELECTRICAL CHARACTERISTICS (Ta=25°C)
UNIT
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight : 1.5g
210S1C
CHARACTERISTIC
Gate Leakage Current
Collector Cutoff Current
GateEmitter Cutoff Voltage
CollectorEmitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turnon Time
Fall Time
Turnoff Time
Thermal Resistance
SYMBOL
TEST CONDITION
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (jc)
VGE=±25V, VCE=0
VCE=400V, VGE=0
IC=1mA, VCE=5V
IC=170A, VGE=20V (Pulsed)
VCE=10V, VGE=0, f=1MHz
MIN. TYP. MAX. UNIT
― ― ±100 nA
― ― 10 µA
4 5 7V
5 8 V
2000
pF
0.1 0.5
0.15 0.5
4.0 6.0
µs
4.5 7.0
― ― 1.66 °C / W
1 2002-02-06





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