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Número de pieza | GT15J321 | |
Descripción | High Power Switching Applications Fast Switching Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT15J321 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications
Fast Switching Applications
Unit: mm
• The 4th generation
• FS (fast switching)
• Enhancement-mode
• High speed: tf = 0.03 µs (typ.)
• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)
• FRD included between emitter and collector.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
15
30
15
30
30
150
−55~150
Equivalent Circuit
Collector
Gate
Emitter
Unit
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
―
―
2-10R1C
1 2002-01-18
1 page 3000
1000
C – VCE
Cies
300
100
30 Coes
Common emitter
Cres
10 VGE = 0
f = 1 MHz
Tc = 25°C
3
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
GT15J321
VCE, VGE – QG
500
Common emitter
RL = 20 Ω
400 Tc = 25°C
20
16
300
300
200
VCE = 100 V
200
100
12
8
4
00
0 20 40 60 80 100 120
Gate charge QG (nC)
30
Common collector
VGE = 0
25
IF − VF
20
15
10 Tc = 125°C
25
5 −40
0
0 0.4 0.8 1.2 1.6
Forward voltage VF (V)
2.0
trr, Irr − IF
100
Common collector
di/dt = −100 A/µs
VGE = 0
30
: Tc = 25°C
: Tc = 125°C
10 trr
Irr
3
1000
300
100
30
1 10
0 3 6 9 12 15
Forward current IF (A)
Safe operating area
50
IC max (pulsed)*
30
IC max (continuous)
50 µs*
10
5
3 DC operation
1 ms*
100 µs*
1
*: Single
0.5 nonrepetitive pulse
Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
13
10
30
10 ms*
100
300
Collector-emitter voltage VCE (V)
1000
Reverse bias SOA
50
30
10
5
3
1
0.5 Tj <= 125°C
0.3 VGE = 15 V
RG = 43 Ω
0.1
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
5 2002-01-18
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet GT15J321.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT15J321 | High Power Switching Applications Fast Switching Applications | Toshiba Semiconductor |
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